Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gain Bandwidth Product
- 300MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Emitter Base Voltage Vebo
- 6V
- Pin Sayısı
- 3
- Polaritychannel Type
- NPN
- Hfemin
- 110
- Transistor Type
- NPN
- Radyasyon Dayanımı
- No
- Weight
- 240mg
- Uzunluk
- 4.58mm
- Ambalaj
- Tape & Box (TB)
- Reach Svhc
- No SVHC
- Collector Emitter Voltage Vceo
- 45V
- Collectoremitter Saturation Voltage
- 250mV
- Element Configuration
- Single
- Collector Base Voltage Vcbo
- 50V
- Frekans
- 300MHz
- Transition Frequency
- 300MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Breakdown Voltage
- 45V
- Kurşunsuz Kodu
- yes
- Terminal Pozisyonu
- BOTTOM
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 2 Weeks
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yükseklik
- 4.58mm
- Contact Plating
- Tin
- Montaj Tipi
- Through Hole
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Parça Durumu
- Active
- Vce Saturation Max Ib Ic
- 600mV @ 5mA, 100mA
- Yayın Yılı
- 2002
- Dc Current Gain Hfe Min Ic Vce
- 110 @ 2mA 5V
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Akım Değeri
- 100mA
- Max Power Dissipation
- 500mW
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