Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Breakdown Voltage
- 20V
- Power Dissipation
- 625mW
- Vce Saturation Max Ib Ic
- 500mV @ 100mA, 1A
- Element Configuration
- Single
- Pin Sayısı
- 3
- Voltage Rated Dc
- -20V
- Yayın Yılı
- 2007
- Collector Emitter Voltage Vceo
- 20V
- Frekans
- 65MHz
- Temel Parça No
- BC369
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Collector Cutoff Max
- 10μA ICBO
- Kurşunsuz Kodu
- yes
- Akım Değeri
- -1A
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 23 hours ago)
- Transistor Application
- AMPLIFIER
- Dc Current Gain Hfe Min Ic Vce
- 85 @ 500mA 1V
- Ambalaj
- Tape & Box (TB)
- Collector Base Voltage Vcbo
- 25V
- Kurşunsuz
- Lead Free
- Tepe Reflow Sıcaklığı (°C)
- 260
- Polaritychannel Type
- PNP
- Gain Bandwidth Product
- 56MHz
- JESD-609 Kodu
- e1
- ECCN Kodu
- EAR99
- Yüzey Montaj
- NO
- Hfemin
- 50
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Sayısı
- 3
- Collectoremitter Saturation Voltage
- 500mV
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Max Collector Current
- 1A
- Montaj Tipi
- Through Hole
- Terminal Pozisyonu
- BOTTOM
- RoHS Durumu
- RoHS Compliant
- Transistor Type
- PNP
- Emitter Base Voltage Vebo
- 5V
- Number Of Elements
- 1
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