Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e0
- Kurşunsuz
- Lead Free
- Tepe Reflow Sıcaklığı (°C)
- 240
- ECCN Kodu
- EAR99
- Lifecycle Status
- OBSOLETE (Last Updated: 4 days ago)
- Kurşunsuz Kodu
- no
- Dc Current Gain Hfe Min Ic Vce
- 85 @ 500mA 1V
- Temel Parça No
- BC369
- Frekans
- 45MHz
- REACH Uyumluluk Kodu
- not_compliant
- Element Configuration
- Single
- Power Dissipation
- 625mW
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Collectoremitter Breakdown Voltage
- 20V
- Number Of Elements
- 1
- Emitter Base Voltage Vebo
- 5V
- Transistor Type
- PNP
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- 500mV
- Transistor Element Material
- SILICON
- Qualification Status
- Not Qualified
- Hfemin
- 85
- Gain Bandwidth Product
- 65MHz
- Polaritychannel Type
- PNP
- Collector Base Voltage Vcbo
- 25V
- Akım Değeri
- -1.5A
- Ambalaj
- Bulk
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Collector Cutoff Max
- 10μA ICBO
- Yayın Yılı
- 2000
- Collector Emitter Voltage Vceo
- 20V
- Voltage Rated Dc
- -20V
- Pin Sayısı
- 3
- Vce Saturation Max Ib Ic
- 500mV @ 100mA, 1A
- Weight
- 201mg
- Max Breakdown Voltage
- 20V
- Max Power Dissipation
- 625mW
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