Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- BOTTOM
- Montaj Tipi
- Through Hole
- Max Collector Current
- 800mA
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Parça Durumu
- Obsolete
- Genişlik
- 4.19mm
- Max Power Dissipation
- 625mW
- Transition Frequency
- 210MHz
- RoHS Durumu
- RoHS Compliant
- Collector Emitter Voltage Vceo
- 45V
- Yayın Yılı
- 2009
- Pin Sayısı
- 3
- Voltage Rated Dc
- 45V
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Max Breakdown Voltage
- 45V
- Hfemin
- 250
- Polaritychannel Type
- NPN
- Collector Base Voltage Vcbo
- 50V
- Gain Bandwidth Product
- 210MHz
- Transistor Application
- AMPLIFIER
- Ambalaj
- Tape & Box (TB)
- Akım Değeri
- 800mA
- Current Collector Cutoff Max
- 100nA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Saturation Voltage
- 700mV
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collectoremitter Breakdown Voltage
- 45V
- Yükseklik
- 5.33mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- 5V
- Transistor Type
- NPN
- Number Of Elements
- 1
- Uzunluk
- 5.2mm
- Element Configuration
- Single
- Power Dissipation
- 625mW
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