Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Weight
- 240mg
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Max Breakdown Voltage
- 45V
- Power Dissipation
- 625mW
- Collector Emitter Voltage Vceo
- 45V
- Yayın Yılı
- 2007
- Uzunluk
- 5.2mm
- Ambalaj
- Tape & Box (TB)
- Transistor Application
- SWITCHING
- Reach Svhc
- No SVHC
- Dc Current Gain Hfe Min Ic Vce
- 250 @ 100mA 1V
- Lifecycle Status
- ACTIVE (Last Updated: 3 days ago)
- Kurşunsuz Kodu
- yes
- Current Collector Cutoff Max
- 100nA
- Temel Parça No
- BC337
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Frekans
- 100MHz
- Hfemin
- 250
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 100MHz
- JESD-609 Kodu
- e3
- Kurşunsuz
- Lead Free
- Polaritychannel Type
- NPN
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- 700mV
- Max Junction Temperature Tj
- 150°C
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 6 Weeks
- Terminal Pozisyonu
- BOTTOM
- Max Collector Current
- 800mA
- Montaj Tipi
- Through Hole
- Radyasyon Dayanımı
- No
- Transition Frequency
- 100MHz
- Number Of Elements
- 1
- Transistor Type
- NPN
- Emitter Base Voltage Vebo
- 5V
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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