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BC327RL1G

ON Semiconductor

BC327RL1G

Single BJT Transistors

In StockRoHS: Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
40
Transistor Element Material
SILICON
Qualification Status
Not Qualified
Collectoremitter Saturation Voltage
-700mV
Pin Sayısı
3
Terminal Sayısı
3
Montaj Tipi
Through Hole
Max Collector Current
800mA
Terminal Pozisyonu
BOTTOM
RoHS Durumu
RoHS Compliant
Transition Frequency
260MHz
Transistor Type
PNP
Power Max
625mW
Emitter Base Voltage Vebo
5V
Number Of Elements
1
Parça Durumu
Obsolete
Max Power Dissipation
625mW
Çalışma Sıcaklığı
-55°C~150°C TJ
Collectoremitter Breakdown Voltage
45V
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation
1.5W
Element Configuration
Single
Vce Saturation Max Ib Ic
700mV @ 50mA, 500mA
Pin Sayısı
3
Voltage Rated Dc
-45V
Collector Emitter Voltage Vceo
700mV
Yayın Yılı
2009
Current Collector Cutoff Max
100nA
Additional Feature
EUROPEAN PART NUMBER
Frekans
260MHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Temel Parça No
BC327
Transistor Application
AMPLIFIER
Dc Current Gain Hfe Min Ic Vce
100 @ 100mA 1V
Ambalaj
Tape & Reel (TR)
Akım Değeri
-800mA
ECCN Kodu
EAR99
Polaritychannel Type
PNP
Tepe Reflow Sıcaklığı (°C)
260

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