Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Collector Current
- 800mA
- Montaj Tipi
- Through Hole
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 6 Weeks
- Terminal Pozisyonu
- BOTTOM
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Parça Durumu
- Active
- Genişlik
- 4.19mm
- Max Power Dissipation
- 625mW
- Contact Plating
- Tin
- RoHS Durumu
- ROHS3 Compliant
- Transition Frequency
- 100MHz
- Voltage Rated Dc
- -45V
- Collector Emitter Voltage Vceo
- 45V
- Yayın Yılı
- 2007
- Max Breakdown Voltage
- 45V
- Weight
- 240mg
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Polaritychannel Type
- PNP
- Gain Bandwidth Product
- 100MHz
- Hfemin
- 100
- Current Collector Cutoff Max
- 100nA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Box (TB)
- Akım Değeri
- -800mA
- Transistor Element Material
- SILICON
- Collectoremitter Saturation Voltage
- -700mV
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 45V
- Yükseklik
- 5.33mm
- Çalışma Sıcaklığı
- 150°C TJ
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type
- PNP
- Emitter Base Voltage Vebo
- -5V
- Number Of Elements
- 1
- Uzunluk
- 5.2mm
- Power Dissipation
- 625mW
- Element Configuration
- Single
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