Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Currentcollector Ic Max
- 800mA
- Transition Frequency
- 100MHz
- RoHS Durumu
- ROHS3 Compliant
- Contact Plating
- Tin
- Parça Durumu
- Active
- Montaj
- Through Hole
- Max Power Dissipation
- 625mW
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 7 Weeks
- Terminal Pozisyonu
- BOTTOM
- Max Collector Current
- -800mA
- Montaj Tipi
- Through Hole
- Radyasyon Dayanımı
- No
- Ambalaj
- Bulk
- Transistor Application
- SWITCHING
- Akım Değeri
- -800mA
- Current Collector Cutoff Max
- 100nA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Hfemin
- 40
- Gain Bandwidth Product
- 260MHz
- Polaritychannel Type
- PNP
- Weight
- 179mg
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Max Breakdown Voltage
- 45V
- Collector Emitter Voltage Vceo
- -45V
- Yayın Yılı
- 2007
- Voltage Rated Dc
- -45V
- Number Of Elements
- 1
- Transistor Type
- PNP
- Emitter Base Voltage Vebo
- -5V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Collectoremitter Breakdown Voltage
- -45V
- Yükseklik
- 5.33mm
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- -700mV
- Max Junction Temperature Tj
- 150°C
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 100mA 1V
- Reach Svhc
- No SVHC
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