Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gain Bandwidth Product
- 200MHz
- RoHS Durumu
- RoHS Compliant
- Hfemin
- 180
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- ECCN Kodu
- EAR99
- Emitter Base Voltage Vebo
- 6V
- Vce Saturation Max Ib Ic
- 600mV @ 5mA, 100mA
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 15nA ICBO
- Transistor Application
- AMPLIFIER
- Frekans
- 200MHz
- Power Dissipation
- 350mW
- Voltage Rated Dc
- 50V
- Transition Frequency
- 200MHz
- Kurşunsuz Kodu
- yes
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 3
- Max Power Dissipation
- 350mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Dc Current Gain Hfe Min Ic Vce
- 180 @ 2mA 5V
- Max Collector Current
- 100mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Collector Base Voltage Vcbo
- 60V
- Akım Değeri
- 100mA
- Pin Sayısı
- 3
- Parça Durumu
- Obsolete
- Kurşunsuz
- Lead Free
- Transistor Element Material
- SILICON
- Polaritychannel Type
- NPN
- Terminal Pozisyonu
- BOTTOM
- JESD-609 Kodu
- e1
- Montaj
- Through Hole
- Ambalaj
- Bulk
- Transistor Type
- NPN
- Yayın Yılı
- 2007
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 50V
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Element Configuration
- Single
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