ATP102-TL-H

Specifications

Transistor Application

SWITCHING

Rds On Max Id Vgs

18.5m Ω @ 20A, 10V

Direnç

18.5mOhm

Lifecycle Status

ACTIVE (Last Updated: 3 days ago)

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

58 mJ

JESD-609 Kodu

e6

Element Configuration

Single

Gate Charge Qg Max Vgs

34nC @ 10V

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

ATPAK (2 leads+tab)

Parça Durumu

Active

Input Capacitance Ciss Max Vds

1490pF @ 10V

Turn On Delay Time

11 ns

Genişlik

7.3mm

Halogen Free

Halogen Free

Yükseklik

1.5mm

Case Connection

DRAIN

Turn Off Delay Time

135 ns

Fet Type

P-Channel

Rise Time

135ns

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Jesd30 Code

R-PSSO-G2

Fall Time Typ

185 ns

Drain To Source Voltage Vdss

30V

Uzunluk

6.5mm

Pin Sayısı

3

Kurşunsuz Kodu

yes

Terminal Sayısı

2

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

40W

RoHS Durumu

ROHS3 Compliant

Power Dissipation Max

40W Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

150°C TJ

Fabrika Tedarik Süresi

2 Weeks