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2SD1835T-AA

ON Semiconductor

2SD1835T-AA

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Hfemin
100
Kurşunsuz Kodu
yes
Temel Parça No
2SD1835
Nem Hassasiyeti (MSL)
1 (Unlimited)
Vce Saturation Max Ib Ic
400mV @ 50mA, 1A
Element Configuration
Single
Power Max
750mW
Parça Durumu
Obsolete
Gain Bandwidth Product
150MHz
Ambalaj
Tape & Box (TB)
Pin Sayısı
3
Kurşunsuz
Lead Free
ECCN Kodu
EAR99
Pin Sayısı
3
Transistor Type
NPN
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Emitter Base Voltage Vebo
6V
Max Collector Current
2A
Dc Current Gain Hfe Min Ic Vce
100 @ 100mA 2V
Collectoremitter Saturation Voltage
150mV
Max Power Dissipation
750mW
Contact Plating
Tin
Yayın Yılı
2003
Montaj Tipi
Through Hole
Max Breakdown Voltage
50V
Current Collector Cutoff Max
100nA ICBO
Collector Base Voltage Vcbo
60V
Fabrika Tedarik Süresi
4 Weeks
Collectoremitter Breakdown Voltage
50V
RoHS Durumu
RoHS Compliant
Collector Emitter Voltage Vceo
50V
Çalışma Sıcaklığı
150°C TJ

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