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2SD1060S-1E

ON Semiconductor

2SD1060S-1E

Single BJT Transistors

RoHS: Compliant

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Specifications

Parça Durumu
Active
Kılıf / Paket
TO-220-3
Kurşunsuz
Lead Free
Fabrika Tedarik Süresi
9 Weeks
Max Collector Current
5A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
50V
Çalışma Sıcaklığı
150°C TJ
Frequency Transition
30MHz
Montaj
Through Hole
Power Max
1.75W
Emitter Base Voltage Vebo
6V
Transistor Type
NPN
Vce Saturation Max Ib Ic
300mV @ 300mA, 3A
Collector Base Voltage Vcbo
60V
Current Collector Cutoff Max
100μA ICBO
Max Power Dissipation
1.75W
Ambalaj
Tube
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Montaj Tipi
Through Hole
Yayın Yılı
2005
Dc Current Gain Hfe Min Ic Vce
140 @ 1A 2V
Collector Emitter Voltage Vceo
300mV
RoHS Durumu
ROHS3 Compliant

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