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2SD1060R-1E

ON Semiconductor

2SD1060R-1E

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Max Collector Current
5A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
29 Weeks
Kurşunsuz
Lead Free
Parça Durumu
Active
Kılıf / Paket
TO-220-3
Power Max
1.75W
Montaj
Through Hole
Çalışma Sıcaklığı
150°C TJ
Frequency Transition
30MHz
Collectoremitter Breakdown Voltage
50V
Max Power Dissipation
1.75W
Collector Base Voltage Vcbo
60V
Current Collector Cutoff Max
100μA ICBO
Emitter Base Voltage Vebo
6V
Transistor Type
NPN
Vce Saturation Max Ib Ic
300mV @ 300mA, 3A
Collector Emitter Voltage Vceo
300mV
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2013
Dc Current Gain Hfe Min Ic Vce
100 @ 1A 2V
Montaj Tipi
Through Hole
Ambalaj
Tube
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)

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