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2SD1012G-SPA

ON Semiconductor

2SD1012G-SPA

Single BJT Transistors

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Parça Durumu
Obsolete
Collectoremitter Saturation Voltage
30mV
Çalışma Sıcaklığı
125°C TJ
Hfemin
280
Temel Parça No
2SD1012
Transistor Type
NPN
Collector Emitter Voltage Vceo
15V
Max Collector Current
700mA
Element Configuration
Single
Currentcollector Ic Max
700mA
Yüzey Montaj
NO
Pin Sayısı
3
Kurşunsuz
Lead Free
Gain Bandwidth Product
250MHz
Kılıf / Paket
3-SIP
Terminal Kaplaması
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Kurşunsuz Kodu
yes
Collectoremitter Breakdown Voltage
15V
Max Power Dissipation
250mW
Collector Base Voltage Vcbo
20V
Current Collector Cutoff Max
1μA ICBO
Emitter Base Voltage Vebo
5V
Vce Saturation Max Ib Ic
80mV @ 10mA, 100mA
Pin Sayısı
3
RoHS Durumu
RoHS Compliant
Dc Current Gain Hfe Min Ic Vce
280 @ 50mA 2V
Yayın Yılı
2012
Montaj Tipi
Through Hole
Ambalaj
Bulk
Polaritychannel Type
NPN

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