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2SD1012F-SPA

ON Semiconductor

2SD1012F-SPA

Single BJT Transistors

RoHS: Compliant

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Specifications

Polaritychannel Type
NPN
Ambalaj
Bulk
Montaj Tipi
Through Hole
Yayın Yılı
2012
Dc Current Gain Hfe Min Ic Vce
160 @ 50mA 2V
Pin Sayısı
3
RoHS Durumu
RoHS Compliant
Emitter Base Voltage Vebo
5V
Vce Saturation Max Ib Ic
80mV @ 10mA, 100mA
Current Collector Cutoff Max
1μA ICBO
Collector Base Voltage Vcbo
20V
Max Power Dissipation
250mW
Collectoremitter Breakdown Voltage
15V
Kurşunsuz Kodu
yes
Frequency Transition
250MHz
Terminal Kaplaması
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Kılıf / Paket
3-SIP
Kurşunsuz
Lead Free
Pin Sayısı
3
Yüzey Montaj
NO
Max Collector Current
700mA
Collector Emitter Voltage Vceo
15V
Transistor Type
NPN
Temel Parça No
2SD1012
Hfemin
160
Çalışma Sıcaklığı
125°C TJ
Configuration
Single
Power Max
250mW
Parça Durumu
Obsolete
ECCN Kodu
EAR99
Nem Hassasiyeti (MSL)
1 (Unlimited)

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