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2SC5964-S-TD-E

ON Semiconductor

2SC5964-S-TD-E

Single BJT Transistors

RoHS: Compliant

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Specifications

Max Power Dissipation
1.3W
Transistor Type
NPN
Vce Saturation Max Ib Ic
290mV @ 100mA, 2A
Current Collector Cutoff Max
1μA ICBO
Yayın Yılı
2013
Dc Current Gain Hfe Min Ic Vce
200 @ 100mA 2V
RoHS Durumu
ROHS3 Compliant
Collector Emitter Voltage Vceo
290mV
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Fabrika Tedarik Süresi
2 Weeks
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Collector Current
3A
Kılıf / Paket
TO-243AA
Parça Durumu
Active
Montaj
Surface Mount
Power Max
1.3W
Collectoremitter Breakdown Voltage
50V
Frequency Transition
380MHz

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