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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Saturation Voltage
- 300mV
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Gain Bandwidth Product
- 200MHz
- Max Power Dissipation
- 500mW
- JESD-609 Kodu
- e3
- Frekans
- 200MHz
- Kurşunsuz
- Lead Free
- ECCN Kodu
- EAR99
- Transition Frequency
- 200MHz
- Emitter Base Voltage Vebo
- 6V
- Yüzey Montaj
- NO
- Hfemin
- 160
- Collectoremitter Breakdown Voltage
- 50V
- Terminal Pozisyonu
- BOTTOM
- Kurşunsuz Kodu
- yes
- Collector Emitter Voltage Vceo
- 300mV
- REACH Uyumluluk Kodu
- unknown
- Collector Base Voltage Vcbo
- 60V
- Vce Saturation Max Ib Ic
- 300mV @ 10mA, 100mA
- RoHS Durumu
- RoHS Compliant
- Power Dissipation
- 500mW
- Montaj Tipi
- Through Hole
- Ambalaj
- Tape & Reel (TR)
- Transistor Type
- NPN
- Parça Durumu
- Obsolete
- Element Configuration
- Single
- Transistor Application
- AMPLIFIER
- Number Of Elements
- 1
- Yayın Yılı
- 2013
- Terminal Kaplaması
- Tin (Sn)
- Max Collector Current
- 150mA
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 1mA 6V
- Current Collector Cutoff Max
- 100nA ICBO
- Terminal Sayısı
- 3
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Çalışma Sıcaklığı
- 150°C TJ
- Polaritychannel Type
- NPN
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