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2SC2812N6-TB-E

ON Semiconductor

2SC2812N6-TB-E

Single BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
50V
Kurşunsuz Kodu
yes
Currentcollector Ic Max
150mA
Parça Durumu
Obsolete
Çalışma Sıcaklığı
150°C TJ
Emitter Base Voltage Vebo
5V
Kurşunsuz
Lead Free
Ambalaj
Tape & Reel (TR)
Collector Emitter Voltage Vceo
500mV
Collector Base Voltage Vcbo
55V
Pin Sayısı
3
JESD-609 Kodu
e3
Yayın Yılı
2012
Collectoremitter Saturation Voltage
100mV
RoHS Durumu
RoHS Compliant
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Current Collector Cutoff Max
100nA ICBO
Vce Saturation Max Ib Ic
500mV @ 5mA, 50mA
Element Configuration
Single
Transistor Type
NPN
Max Collector Current
150mA
Montaj Tipi
Surface Mount
Max Power Dissipation
200mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain Bandwidth Product
100MHz
Dc Current Gain Hfe Min Ic Vce
135 @ 1mA 6V
Pin Sayısı
3
Terminal Kaplaması
Tin (Sn)

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