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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 200
- Parça Durumu
- Active
- Emitter Base Voltage Vebo
- -5V
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- 125°C TJ
- Vce Saturation Max Ib Ic
- 80mV @ 10mA, 100mA
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 50mA 2V
- Genişlik
- 1.5mm
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Tin/Bismuth (Sn/Bi)
- Transition Frequency
- 250MHz
- Transistor Element Material
- SILICON
- Yükseklik
- 1.1mm
- Polaritychannel Type
- PNP
- Terminal Pozisyonu
- DUAL
- Uzunluk
- 2.9mm
- Collector Emitter Voltage Vceo
- 15V
- Max Frequency
- 250MHz
- Yayın Yılı
- 2012
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Collectoremitter Saturation Voltage
- -15mV
- Currentcollector Ic Max
- 700mA
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e6
- Terminal Sayısı
- 3
- Max Power Dissipation
- 200mW
- Max Collector Current
- 700mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Kurşunsuz
- Lead Free
- Terminal Formu
- GULL WING
- Collector Base Voltage Vcbo
- -20V
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 2 Weeks
- Yüzey Montaj
- YES
- Transistor Type
- PNP
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
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