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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frequency Transition
- 130MHz
- Transistor Application
- SWITCHING
- Collector Emitter Voltage Vceo
- 100V
- Terminal Pozisyonu
- SINGLE
- Yayın Yılı
- 2012
- Temel Parça No
- 2SB1216
- Dc Current Gain Hfe Min Ic Vce
- 140 @ 500mA 5V
- Vce Saturation Max Ib Ic
- 500mV @ 200mA, 2A
- Emitter Base Voltage Vebo
- -6V
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- 150°C TJ
- Hfemin
- 70
- Parça Durumu
- Active
- Transition Frequency
- 130MHz
- Power Max
- 1W
- Polaritychannel Type
- PNP
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Tin/Bismuth (Sn/Bi)
- Montaj Tipi
- Through Hole
- Max Collector Current
- 4A
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Collector Base Voltage Vcbo
- 120V
- Kurşunsuz
- Lead Free
- Max Power Dissipation
- 1W
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Case Connection
- COLLECTOR
- Current Collector Cutoff Max
- 1μA ICBO
- Kurşunsuz Kodu
- yes
- Yüzey Montaj
- NO
- Transistor Type
- PNP
- HTS Kodu
- 8541.29.00.75
- Fabrika Tedarik Süresi
- 2 Weeks
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 100V
- Ambalaj
- Bulk
- Terminal Sayısı
- 3
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e6
- ECCN Kodu
- EAR99
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