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2SB1205T-E

ON Semiconductor

2SB1205T-E

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Collector Emitter Voltage Vceo
-500mV
Max Collector Current
5A
JESD-609 Kodu
e6
Çalışma Sıcaklığı
150°C TJ
Transistor Type
PNP
Montaj Tipi
Through Hole
Hfemin
200
Yüzey Montaj
NO
Dc Current Gain Hfe Min Ic Vce
200 @ 500mA 2V
Collector Base Voltage Vcbo
-25V
ECCN Kodu
EAR99
Kurşunsuz
Lead Free
Gain Bandwidth Product
320MHz
Current Collector Cutoff Max
500nA ICBO
Max Power Dissipation
1W
Pin Sayısı
3
Emitter Base Voltage Vebo
-5V
Yayın Yılı
2013
Collectoremitter Saturation Voltage
-250mV
Ambalaj
Bulk
Vce Saturation Max Ib Ic
500mV @ 60mA, 3A
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Temel Parça No
2SB1205
Collectoremitter Breakdown Voltage
20V
Fabrika Tedarik Süresi
2 Weeks
Polaritychannel Type
PNP
Parça Durumu
Active
Kılıf / Paket
TO-251-3 Short Leads, IPak, TO-251AA
Currentcollector Ic Max
5A

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