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2SB1201T-TL-E

ON Semiconductor

2SB1201T-TL-E

Single BJT Transistors

RoHS: Compliant

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Specifications

Collector Base Voltage Vcbo
60V
Kurşunsuz
Lead Free
ECCN Kodu
EAR99
Max Power Dissipation
800mW
Kurşunsuz Kodu
yes
Current Collector Cutoff Max
100nA ICBO
Pin Sayısı
3
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Collector Emitter Voltage Vceo
50V
Max Collector Current
2A
Çalışma Sıcaklığı
150°C TJ
JESD-609 Kodu
e6
Hfemin
100
Montaj Tipi
Surface Mount
Transistor Type
PNP
Dc Current Gain Hfe Min Ic Vce
200 @ 100mA 2V
Terminal Kaplaması
Tin/Bismuth (Sn/Bi)
Temel Parça No
2SB1201
Collectoremitter Breakdown Voltage
50V
Fabrika Tedarik Süresi
2 Weeks
Power Dissipation
800mW
Pin Sayısı
3
Parça Durumu
Active
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Currentcollector Ic Max
2A
Emitter Base Voltage Vebo
6V
Frekans
150MHz
Yayın Yılı
2012
Number Of Elements
1
Vce Saturation Max Ib Ic
700mV @ 50mA, 1A
Ambalaj
Tape & Reel (TR)
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
ROHS3 Compliant

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