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2SA733P

ON Semiconductor

2SA733P

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Vce Saturation Max Ib Ic
300mV @ 10mA, 100mA
Ambalaj
Bulk
Transition Frequency
50MHz
Frekans
50MHz
Number Of Elements
1
Emitter Base Voltage Vebo
5V
Transistor Application
AMPLIFIER
Element Configuration
Single
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
50V
Weight
201mg
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Parça Durumu
Obsolete
Polaritychannel Type
PNP
Power Dissipation
625mW
Max Collector Current
500mA
Collector Emitter Voltage Vceo
300mV
Terminal Sayısı
3
Dc Current Gain Hfe Min Ic Vce
200 @ 1mA 6V
Montaj Tipi
Through Hole
Hfemin
90
Transistor Type
PNP
Çalışma Sıcaklığı
-55°C~150°C TJ
Kurşunsuz
Lead Free
Gain Bandwidth Product
50MHz
Collector Base Voltage Vcbo
60V
Montaj
Through Hole
Terminal Pozisyonu
BOTTOM
Pin Sayısı
3
Max Power Dissipation
625mW
Current Collector Cutoff Max
100nA ICBO
Transistor Element Material
SILICON

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