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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Collector Current
- 2A
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- -240mV
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 100mA 5V
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e6
- Power Max
- 800mW
- Yüzey Montaj
- NO
- Hfemin
- 200
- Montaj Tipi
- Through Hole
- Transistor Type
- PNP
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Collector Base Voltage Vcbo
- 100V
- Pin Sayısı
- 3
- Contact Plating
- Tin
- Terminal Pozisyonu
- SINGLE
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 800mW
- Kurşunsuz Kodu
- yes
- Current Collector Cutoff Max
- 1μA ICBO
- Transition Frequency
- 300MHz
- Ambalaj
- Bulk
- Vce Saturation Max Ib Ic
- 240mV @ 100mA, 1A
- Emitter Base Voltage Vebo
- -7V
- Transistor Application
- SWITCHING
- Configuration
- SINGLE
- Number Of Elements
- 1
- Yayın Yılı
- 2012
- RoHS Durumu
- RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Frequency Transition
- 300MHz
- Collectoremitter Breakdown Voltage
- 100V
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Fabrika Tedarik Süresi
- 4 Weeks
- Pin Sayısı
- 3
- Parça Durumu
- Obsolete
- Polaritychannel Type
- PNP
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