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2SA2126-S-TL-E

ON Semiconductor

2SA2126-S-TL-E

Single BJT Transistors

RoHS: Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Dc Current Gain Hfe Min Ic Vce
200 @ 100mA 2V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
150°C TJ
Transistor Type
PNP
Montaj Tipi
Surface Mount
Max Collector Current
3A
Ambalaj
Tape & Reel (TR)
Vce Saturation Max Ib Ic
520mV @ 100mA, 2A
Emitter Base Voltage Vebo
6V
Yayın Yılı
2001
Number Of Elements
1
Collector Emitter Voltage Vceo
520mV
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Pin Sayısı
3
Fabrika Tedarik Süresi
4 Weeks
Power Dissipation
800mW
Current Collector Cutoff Max
1μA ICBO
Parça Durumu
Not For New Designs
Max Power Dissipation
800mW
Kurşunsuz
Lead Free
Collectoremitter Breakdown Voltage
50V
Frequency Transition
390MHz
Collector Base Voltage Vcbo
50V

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