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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 800mW
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE (Last Updated: 4 days ago)
- Case Connection
- COLLECTOR
- Max Frequency
- 360MHz
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Gain Bandwidth Product
- 400MHz
- Max Breakdown Voltage
- 50V
- Transistor Type
- PNP
- Hfemin
- 200
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 500mA 2V
- Terminal Sayısı
- 2
- Collector Emitter Voltage Vceo
- 50V
- Genişlik
- 5.5mm
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Kaplaması
- Tin/Bismuth (Sn/Bi)
- Frequency Transition
- 360MHz
- Collectoremitter Breakdown Voltage
- 50V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2012
- Vce Saturation Max Ib Ic
- 430mV @ 100mA, 2A
- HTS Kodu
- 8541.21.00.75
- Current Collector Cutoff Max
- 1μA ICBO
- Pin Sayısı
- 3
- Collector Base Voltage Vcbo
- 100V
- JESD-609 Kodu
- e6
- Çalışma Sıcaklığı
- 150°C TJ
- Yüzey Montaj
- YES
- Montaj Tipi
- Surface Mount
- Max Collector Current
- 5A
- Fabrika Tedarik Süresi
- 4 Weeks
- Polaritychannel Type
- PNP
- Parça Durumu
- Active
- Uzunluk
- 6.5mm
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