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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Contact Plating
- Tin
- Radyasyon Dayanımı
- No
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- Montaj
- Through Hole
- Transistor Element Material
- SILICON
- Current Collector Cutoff Max
- 5μA ICBO
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 130W
- Gain Bandwidth Product
- 30MHz
- ECCN Kodu
- EAR99
- Collector Base Voltage Vcbo
- -250V
- Dc Current Gain Hfe Min Ic Vce
- 55 @ 1A 5V
- JESD-609 Kodu
- e3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Type
- PNP
- Hfemin
- 55
- Montaj Tipi
- Through Hole
- Max Collector Current
- 17A
- Terminal Sayısı
- 3
- Collector Emitter Voltage Vceo
- 250V
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Fabrika Tedarik Süresi
- 2 Weeks
- Power Dissipation
- 130W
- Parça Durumu
- Active
- Polaritychannel Type
- PNP
- Temel Parça No
- 2SA1962
- Collectoremitter Breakdown Voltage
- 250V
- Weight
- 6.401g
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transition Frequency
- 30MHz
- Ambalaj
- Tube
- Vce Saturation Max Ib Ic
- 3V @ 800mA, 8A
- Transistor Application
- AMPLIFIER
- Emitter Base Voltage Vebo
- -5V
- Number Of Elements
- 1
- Yayın Yılı
- 2005
- Jesd30 Code
- R-PSFM-T3
- Frekans
- 30MHz
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