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2SA1179N6-CPA-TB-E

ON Semiconductor

2SA1179N6-CPA-TB-E

Single BJT Transistors

RoHS: Compliant

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Specifications

Max Collector Current
150mA
Çalışma Sıcaklığı
150°C TJ
Montaj Tipi
Surface Mount
Polarity
PNP
RoHS Durumu
RoHS Compliant
Yayın Yılı
2012
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Parça Durumu
Obsolete
Transistor Type
PNP
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
200mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
3
Number Of Channels
2
Kurşunsuz
Lead Free
Collectoremitter Breakdown Voltage
50V
Radyasyon Dayanımı
No
Current Collector Cutoff Max
100nA ICBO
Collector Base Voltage Vcbo
55V
Collector Emitter Voltage Vceo
50V
Voltage Collector Emitter Breakdown Max
50V
Min. Çalışma Sıcaklığı
-55°C
Maks. Çalışma Sıcaklığı
150°C
Frequency Transition
180MHz
Currentcollector Ic Max
150mA
Continuous Collector Current
150mA
Vce Saturation Max Ib Ic
500mV @ 5mA, 50mA
Dc Current Gain Hfe Min Ic Vce
200 @ 1mA 6V
Power Max
200mW

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