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Specifications
- Collectoremitter Saturation Voltage
- 500mV
- Reach Svhc
- No SVHC
- Emitter Base Voltage Vebo
- 5V
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 500mA 2V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gain Bandwidth Product
- 100MHz
- ECCN Kodu
- EAR99
- Frekans
- 100MHz
- Number Of Elements
- 1
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Kılıf / Paket
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Yayın Yılı
- 2006
- JESD-609 Kodu
- e1
- Temel Parça No
- 2SA1020
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Power Dissipation
- 900mW
- Current Collector Cutoff Max
- 1μA ICBO
- Collector Base Voltage Vcbo
- 50V
- Uzunluk
- 5.21mm
- Hfemin
- 70
- Yükseklik
- 7.87mm
- Akım Değeri
- -2A
- Transition Frequency
- 100MHz
- Collector Emitter Voltage Vceo
- 50V
- Terminal Pozisyonu
- BOTTOM
- Terminal Sayısı
- 3
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 1A
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Kurşunsuz Kodu
- yes
- Polaritychannel Type
- PNP
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 2A
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Genişlik
- 4.19mm
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