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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Through Hole
- Ambalaj
- Bulk
- Max Power Dissipation
- 900mW
- Kurşunsuz
- Lead Free
- Voltage Rated Dc
- -50V
- Jesd30 Code
- O-PBCY-T3
- Collectoremitter Breakdown Voltage
- 50V
- Current Collector Cutoff Max
- 1μA ICBO
- Max Collector Current
- 2A
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Montaj Tipi
- Through Hole
- Parça Durumu
- Obsolete
- Kılıf / Paket
- TO-226-3, TO-92-3 Long Body
- Yayın Yılı
- 2006
- RoHS Durumu
- RoHS Compliant
- Element Configuration
- Single
- Transistor Type
- PNP
- JESD-609 Kodu
- e1
- Transistor Element Material
- SILICON
- Temel Parça No
- 2SA1020
- Emitter Base Voltage Vebo
- 5V
- Qualification Status
- Not Qualified
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 500mA 2V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 1A
- HTS Kodu
- 8541.21.00.95
- Gain Bandwidth Product
- 100MHz
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Polaritychannel Type
- PNP
- ECCN Kodu
- EAR99
- Collector Base Voltage Vcbo
- 50V
- Collectoremitter Saturation Voltage
- 500mV
- Hfemin
- 70
- Akım Değeri
- -2A
- Collector Emitter Voltage Vceo
- 500mV
- Transition Frequency
- 100MHz
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