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2N6520BU

ON Semiconductor

2N6520BU

Single BJT Transistors

RoHS: Compliant

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Specifications

Power Dissipation
625mW
Akım Değeri
-500mA
Temel Parça No
2N6520
Collector Emitter Voltage Vceo
1V
Montaj
Through Hole
Voltage Rated Dc
-350V
Emitter Base Voltage Vebo
-5V
Collectoremitter Breakdown Voltage
350V
Montaj Tipi
Through Hole
Kurşunsuz
Lead Free
RoHS Durumu
RoHS Compliant
Collectoremitter Saturation Voltage
-1V
Parça Durumu
Obsolete
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Weight
178.2mg
Max Power Dissipation
625mW
Gain Bandwidth Product
200MHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Type
PNP
Current Collector Cutoff Max
50nA ICBO
Number Of Elements
1
Hfemin
30
Element Configuration
Single
Vce Saturation Max Ib Ic
1V @ 5mA, 50mA
Collector Base Voltage Vcbo
-350V
Ambalaj
Bulk
Çalışma Sıcaklığı
150°C TJ
Reach Svhc
No SVHC
Frekans
200MHz
Dc Current Gain Hfe Min Ic Vce
20 @ 50mA 10V
Max Collector Current
500mA
Pin Sayısı
3

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