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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Max Breakdown Voltage
- 350V
- Polaritychannel Type
- NPN
- Genişlik
- 3.86mm
- Voltage Rated Dc
- 350V
- Akım Değeri
- 500mA
- Temel Parça No
- 2N6517
- Gain Bandwidth Product
- 200MHz
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Max Power Dissipation
- 625mW
- Yayın Yılı
- 2007
- Ambalaj
- Tape & Box (TB)
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Sayısı
- 3
- Vce Saturation Max Ib Ic
- 1V @ 5mA, 50mA
- Collector Base Voltage Vcbo
- 350V
- Montaj Tipi
- Through Hole
- Collectoremitter Breakdown Voltage
- 350V
- Emitter Base Voltage Vebo
- 6V
- Montaj
- Through Hole
- Terminal Pozisyonu
- BOTTOM
- Power Dissipation
- 625mW
- Collector Emitter Voltage Vceo
- 350V
- Transition Frequency
- 40MHz
- Transistor Type
- NPN
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 50nA ICBO
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Contact Plating
- Tin
- Weight
- 240mg
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Collectoremitter Saturation Voltage
- 1V
- Parça Durumu
- Active
- Reach Svhc
- No SVHC
- Uzunluk
- 4.58mm
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
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