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Same-day dispatch from stock
Genuine parts
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RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation
- 625mW
- Pin Sayısı
- 3
- Yayın Yılı
- 2007
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Collectoremitter Saturation Voltage
- 1V
- Transistor Type
- NPN
- Transition Frequency
- 40MHz
- Current Collector Cutoff Max
- 50nA ICBO
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Gain Bandwidth Product
- 200MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- yes
- Terminal Pozisyonu
- BOTTOM
- Voltage Rated Dc
- 350V
- Power Dissipation
- 625mW
- Akım Değeri
- 500mA
- Temel Parça No
- 2N6517
- Collector Emitter Voltage Vceo
- 1V
- Collectoremitter Breakdown Voltage
- 350V
- Montaj Tipi
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- 260
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Yüzey Montaj
- NO
- Polaritychannel Type
- NPN
- Qualification Status
- Not Qualified
- Emitter Base Voltage Vebo
- 6V
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 50mA 10V
- Max Collector Current
- 500mA
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Sayısı
- 3
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- JESD-609 Kodu
- e1
- Hfemin
- 20
- Element Configuration
- Single
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