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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 625mW
- Akım Değeri
- 500mA
- Temel Parça No
- 2N6517
- Collector Emitter Voltage Vceo
- 1V
- Montaj
- Through Hole
- Terminal Pozisyonu
- BOTTOM
- Voltage Rated Dc
- 350V
- Polaritychannel Type
- NPN
- Qualification Status
- Not Qualified
- Emitter Base Voltage Vebo
- 6V
- Collectoremitter Breakdown Voltage
- 350V
- Montaj Tipi
- Through Hole
- Kurşunsuz
- Contains Lead
- Tepe Reflow Sıcaklığı (°C)
- 240
- RoHS Durumu
- Non-RoHS Compliant
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2004
- Pin Sayısı
- 3
- Parça Durumu
- Obsolete
- Collectoremitter Saturation Voltage
- 1V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation
- 625mW
- Gain Bandwidth Product
- 200MHz
- ECCN Kodu
- EAR99
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kurşunsuz Kodu
- no
- Transistor Type
- NPN
- Transition Frequency
- 40MHz
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 50nA ICBO
- JESD-609 Kodu
- e0
- Element Configuration
- Single
- Hfemin
- 20
- Vce Saturation Max Ib Ic
- 1V @ 5mA, 50mA
- Collector Base Voltage Vcbo
- 350V
- Terminal Sayısı
- 3
- Lifecycle Status
- OBSOLETE (Last Updated: 1 week ago)
- HTS Kodu
- 8541.21.00.95
- Ambalaj
- Bulk
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
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