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2N6111G

ON Semiconductor

2N6111G

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Hfemin
30
Temel Parça No
2N6111
Power Dissipation
40W
Voltage Rated Dc
-30V
Collectoremitter Saturation Voltage
3.5V
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Radyasyon Dayanımı
No
Tepe Reflow Süresi (maks. sn)
40
Collectoremitter Breakdown Voltage
30V
Case Connection
COLLECTOR
Collector Emitter Voltage Vceo
30V
Kurşunsuz
Lead Free
Reach Svhc
No SVHC
Transistor Application
SWITCHING
Jedec95 Code
TO-220AB
Dc Current Gain Hfe Min Ic Vce
30 @ 3A 4V
Kılıf / Paket
TO-220-3
Çalışma Sıcaklığı
-65°C~150°C TJ
Montaj Tipi
Through Hole
RoHS Durumu
ROHS3 Compliant
Collector Base Voltage Vcbo
40V
Kurşunsuz Kodu
yes
Transition Frequency
10MHz
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Tepe Reflow Sıcaklığı (°C)
260
ECCN Kodu
EAR99
Terminal Sayısı
3
Transistor Element Material
SILICON
Fabrika Tedarik Süresi
2 Weeks
Current Collector Cutoff Max
1mA
Yüzey Montaj
NO
Emitter Base Voltage Vebo
5V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Yükseklik
15.75mm
Genişlik
4.82mm
Pin Sayısı
3
Max Power Dissipation
40W
Terminal Kaplaması
Tin (Sn)
Element Configuration
Single

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