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2N6107G

ON Semiconductor

2N6107G

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Ambalaj
Tube
Element Configuration
Single
Yayın Yılı
2006
Weight
4.535924g
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
5V
Yüzey Montaj
NO
Parça Durumu
Active
Pin Sayısı
3
Genişlik
4.826mm
Yükseklik
15.748mm
Max Power Dissipation
40W
Transistor Type
PNP
Frekans
10MHz
Pin Sayısı
3
Uzunluk
10.2616mm
Vce Saturation Max Ib Ic
3.5V @ 3A, 7A
Gain Bandwidth Product
10MHz
JESD-609 Kodu
e3
Contact Plating
Tin
Number Of Elements
1
Polaritychannel Type
PNP
Akım Değeri
-7A
Max Collector Current
7A
Reach Svhc
No SVHC
Kurşunsuz
Lead Free
Transistor Application
SWITCHING
Collectoremitter Saturation Voltage
3.5V
Voltage Rated Dc
-70V
Power Dissipation
40W
Temel Parça No
2N6107
Hfemin
30
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Collectoremitter Breakdown Voltage
70V
Tepe Reflow Süresi (maks. sn)
40
Radyasyon Dayanımı
No
Collector Emitter Voltage Vceo
70V
Case Connection
COLLECTOR
Kurşunsuz Kodu
yes
Tepe Reflow Sıcaklığı (°C)
260

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