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2N6045G

ON Semiconductor

2N6045G

Single BJT Transistors

RoHS: Compliant

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Specifications

Number Of Elements
1
Vce Saturation Max Ib Ic
2V @ 12mA, 3A
JESD-609 Kodu
e3
Uzunluk
10.2616mm
Transistor Type
NPN - Darlington
Pin Sayısı
3
Akım Değeri
8A
Max Collector Current
8A
Weight
4.535924g
Yayın Yılı
2006
Element Configuration
Single
Ambalaj
Tube
Terminal Kaplaması
Tin (Sn)
Max Power Dissipation
75W
Genişlik
4.826mm
Yükseklik
15.748mm
Pin Sayısı
3
Parça Durumu
Active
Yüzey Montaj
NO
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
5V
Terminal Sayısı
3
Current Collector Cutoff Max
20μA
Fabrika Tedarik Süresi
2 Weeks
Transistor Element Material
SILICON
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
260
Kurşunsuz Kodu
yes
Collector Base Voltage Vcbo
100V
Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-65°C~150°C TJ
RoHS Durumu
ROHS3 Compliant
Jedec95 Code
TO-220AB
Kılıf / Paket
TO-220-3
Dc Current Gain Hfe Min Ic Vce
1000 @ 3A 4V
Transistor Application
SWITCHING
Reach Svhc
No SVHC
Kurşunsuz
Lead Free
Case Connection
COLLECTOR
Collector Emitter Voltage Vceo
100V

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