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2N6039G

ON Semiconductor

2N6039G

Single BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Max Collector Current
4A
Akım Değeri
4A
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Pin Sayısı
3
Uzunluk
11.04mm
Vce Saturation Max Ib Ic
3V @ 40mA, 4A
JESD-609 Kodu
e3
Contact Plating
Tin
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
5V
Yüzey Montaj
NO
Parça Durumu
Active
Pin Sayısı
3
Genişlik
7.74mm
Yükseklik
2.66mm
Max Power Dissipation
40W
Ambalaj
Bulk
Element Configuration
Single
Yayın Yılı
2000
Weight
4.535924g
Kılıf / Paket
TO-225AA, TO-126-3
Dc Current Gain Hfe Min Ic Vce
750 @ 2A 3V
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-65°C~150°C TJ
Collector Base Voltage Vcbo
80V
Kurşunsuz Kodu
yes
Tepe Reflow Sıcaklığı (°C)
260
Transition Frequency
25MHz
ECCN Kodu
EAR99
Current Collector Cutoff Max
100μA
Fabrika Tedarik Süresi
8 Weeks
Transistor Element Material
SILICON
Terminal Sayısı
3
Collectoremitter Saturation Voltage
2V
Voltage Rated Dc
80V
Power Dissipation
40W
Temel Parça No
2N6039

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