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2N5885G

ON Semiconductor

2N5885G

Single BJT Transistors

RoHS: Compliant

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Specifications

Akım Değeri
600mA
Max Collector Current
25A
Uzunluk
39.37mm
Transistor Type
NPN
Frekans
4MHz
Pin Sayısı
2
Vce Saturation Max Ib Ic
4V @ 6.25A, 25A
JESD-609 Kodu
e3
Gain Bandwidth Product
4MHz
Polaritychannel Type
NPN
Number Of Elements
1
Contact Plating
Tin
Yüzey Montaj
NO
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
5V
Parça Durumu
Active
Genişlik
26.67mm
Yükseklik
8.51mm
Pin Sayısı
2
Max Power Dissipation
200W
Terminal Formu
PIN/PEG
Element Configuration
Single
Ambalaj
Tray
Weight
4.535924g
Yayın Yılı
2005
Dc Current Gain Hfe Min Ic Vce
20 @ 10A 4V
Kılıf / Paket
TO-204AA, TO-3
Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-65°C~200°C TJ
RoHS Durumu
ROHS3 Compliant
Collector Base Voltage Vcbo
60V
Kurşunsuz Kodu
yes
Transition Frequency
4MHz
Tepe Reflow Sıcaklığı (°C)
260
ECCN Kodu
EAR99
Terminal Sayısı
2
Fabrika Tedarik Süresi
2 Weeks
Current Collector Cutoff Max
2mA
Transistor Element Material
SILICON
Hfemin
20

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