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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Yayın Yılı
- 2006
- Transistor Application
- SWITCHING
- Kurşunsuz
- Contains Lead
- Ambalaj
- Bulk
- Element Configuration
- Single
- Parça Durumu
- Obsolete
- Lifecycle Status
- OBSOLETE (Last Updated: 4 days ago)
- Temel Parça No
- 2N5655
- Emitter Base Voltage Vebo
- 6V
- Voltage Rated Dc
- 250V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Saturation Voltage
- 1V
- Yüzey Montaj
- NO
- Hfemin
- 25
- Collector Emitter Voltage Vceo
- 10V
- Max Power Dissipation
- 20W
- Collectoremitter Breakdown Voltage
- 250V
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 30
- Tepe Reflow Sıcaklığı (°C)
- 240
- Gain Bandwidth Product
- 10MHz
- JESD-609 Kodu
- e0
- Transition Frequency
- 10MHz
- Vce Saturation Max Ib Ic
- 10V @ 100mA, 500mA
- Kurşunsuz Kodu
- no
- Pin Sayısı
- 3
- Transistor Type
- NPN
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 100μA
- Terminal Sayısı
- 3
- Polaritychannel Type
- NPN
- Qualification Status
- Not Qualified
- ECCN Kodu
- EAR99
- Akım Değeri
- 500mA
- Max Collector Current
- 500mA
- Kılıf / Paket
- TO-225AA, TO-126-3
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 100mA 10mV
- REACH Uyumluluk Kodu
- not_compliant
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