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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kurşunsuz
- Lead Free
- Transistor Application
- AMPLIFIER
- Radyasyon Dayanımı
- No
- Max Breakdown Voltage
- 160V
- Collectoremitter Breakdown Voltage
- 160V
- Collector Emitter Voltage Vceo
- 160V
- Hfemin
- 80
- Voltage Rated Dc
- 160V
- Collectoremitter Saturation Voltage
- 200mV
- Terminal Pozisyonu
- BOTTOM
- Power Dissipation
- 625mW
- Temel Parça No
- 2N5551
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 7 Weeks
- Current Collector Cutoff Max
- 50nA ICBO
- Transistor Element Material
- SILICON
- Kurşunsuz Kodu
- yes
- Transition Frequency
- 100MHz
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Collector Base Voltage Vcbo
- 180V
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Element Configuration
- Single
- Ambalaj
- Tape & Reel (TR)
- Weight
- 240mg
- Yayın Yılı
- 2007
- Frequency Transition
- 100MHz
- Genişlik
- 4.19mm
- Montaj
- Through Hole
- Yükseklik
- 5.33mm
- Max Power Dissipation
- 625mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- 6V
- Parça Durumu
- Active
- Polaritychannel Type
- NPN
- Number Of Elements
- 1
- Contact Plating
- Tin
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