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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Obsolete
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Emitter Base Voltage Vebo
- 6V
- Temel Parça No
- 2N5551
- Voltage Rated Dc
- 160V
- Power Dissipation
- 625mW
- Collectoremitter Saturation Voltage
- 250mV
- Terminal Pozisyonu
- BOTTOM
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yüzey Montaj
- NO
- Hfemin
- 80
- Collector Emitter Voltage Vceo
- 160V
- Max Power Dissipation
- 625mW
- Collectoremitter Breakdown Voltage
- 160V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Yayın Yılı
- 2007
- Transistor Application
- AMPLIFIER
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Box (TB)
- Element Configuration
- Single
- Akım Değeri
- 600mA
- Max Collector Current
- 600mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Collector Base Voltage Vcbo
- 180V
- RoHS Durumu
- RoHS Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Through Hole
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gain Bandwidth Product
- 300MHz
- JESD-609 Kodu
- e1
- Transition Frequency
- 100MHz
- Vce Saturation Max Ib Ic
- 200mV @ 5mA, 50mA
- Frekans
- 300MHz
- Pin Sayısı
- 3
- Kurşunsuz Kodu
- yes
- Transistor Type
- NPN
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