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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 625mW
- Collector Emitter Voltage Vceo
- 200mV
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 160V
- Tepe Reflow Süresi (maks. sn)
- 30
- Montaj
- Through Hole
- Parça Durumu
- Obsolete
- Terminal Pozisyonu
- BOTTOM
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Saturation Voltage
- 250mV
- Voltage Rated Dc
- 160V
- Emitter Base Voltage Vebo
- 6V
- Temel Parça No
- 2N5551
- Hfemin
- 80
- Transistor Application
- AMPLIFIER
- Yayın Yılı
- 2006
- Jesd30 Code
- O-PBCY-T3
- Kurşunsuz
- Contains Lead
- Ambalaj
- Tape & Box (TB)
- Element Configuration
- Single
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- HTS Kodu
- 8541.21.00.95
- Collector Base Voltage Vcbo
- 180V
- RoHS Durumu
- Non-RoHS Compliant
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Akım Değeri
- 600mA
- Max Collector Current
- 600mA
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- REACH Uyumluluk Kodu
- not_compliant
- Number Of Elements
- 1
- Current Collector Cutoff Max
- 50nA ICBO
- Transistor Element Material
- SILICON
- Polaritychannel Type
- NPN
- Terminal Sayısı
- 3
- Qualification Status
- Not Qualified
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- 240
- Vce Saturation Max Ib Ic
- 200mV @ 5mA, 50mA
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