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2N5551RLRA

ON Semiconductor

2N5551RLRA

Single BJT Transistors

RoHS: Compliant

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Specifications

Max Collector Current
600mA
Akım Değeri
600mA
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Dc Current Gain Hfe Min Ic Vce
80 @ 10mA 5V
REACH Uyumluluk Kodu
not_compliant
Collector Base Voltage Vcbo
180V
RoHS Durumu
Non-RoHS Compliant
Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-55°C~150°C TJ
Tepe Reflow Sıcaklığı (°C)
240
Vce Saturation Max Ib Ic
200mV @ 5mA, 50mA
Transition Frequency
100MHz
JESD-609 Kodu
e0
Gain Bandwidth Product
300MHz
Transistor Type
NPN
Current Collector Cutoff Max
50nA ICBO
Number Of Elements
1
Transistor Element Material
SILICON
Polaritychannel Type
NPN
Terminal Sayısı
3
Qualification Status
Not Qualified
ECCN Kodu
EAR99
Parça Durumu
Obsolete
Voltage Rated Dc
160V
Collectoremitter Saturation Voltage
250mV
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Pozisyonu
BOTTOM
Temel Parça No
2N5551
Emitter Base Voltage Vebo
6V
Hfemin
80
Max Power Dissipation
625mW
Collector Emitter Voltage Vceo
200mV
Pin Sayısı
3
Max Breakdown Voltage
160V
Collectoremitter Breakdown Voltage
160V
Tepe Reflow Süresi (maks. sn)
30
Montaj
Through Hole
HTS Kodu
8541.21.00.95
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Transistor Application
AMPLIFIER

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