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2N5551RL1G

ON Semiconductor

2N5551RL1G

Single BJT Transistors

RoHS: Compliant

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Specifications

Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Hfemin
80
Temel Parça No
2N5551
Power Dissipation
625mW
Terminal Pozisyonu
BOTTOM
Voltage Rated Dc
160V
Collectoremitter Saturation Voltage
250mV
Collector Emitter Voltage Vceo
160V
Radyasyon Dayanımı
No
Tepe Reflow Süresi (maks. sn)
40
Collectoremitter Breakdown Voltage
160V
Max Breakdown Voltage
160V
Transistor Application
AMPLIFIER
Kurşunsuz
Lead Free
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Dc Current Gain Hfe Min Ic Vce
80 @ 10mA 5V
Collector Base Voltage Vcbo
180V
Çalışma Sıcaklığı
-55°C~150°C TJ
Montaj Tipi
Through Hole
RoHS Durumu
RoHS Compliant
Transition Frequency
100MHz
Additional Feature
EUROPEAN PART NUMBER
Tepe Reflow Sıcaklığı (°C)
260
Kurşunsuz Kodu
yes
Terminal Sayısı
3
Transistor Element Material
SILICON
Current Collector Cutoff Max
50nA ICBO
ECCN Kodu
EAR99
Parça Durumu
Obsolete
Yüzey Montaj
NO
Emitter Base Voltage Vebo
6V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Power Dissipation
625mW
Pin Sayısı
3
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Yayın Yılı
2006
Element Configuration
Single
Ambalaj
Tape & Reel (TR)
Max Collector Current
600mA
Akım Değeri
600mA

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