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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 5.2mm
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Frekans
- 300MHz
- Transistor Type
- NPN
- Gain Bandwidth Product
- 300MHz
- JESD-609 Kodu
- e3
- Transition Frequency
- 100MHz
- Vce Saturation Max Ib Ic
- 200mV @ 5mA, 50mA
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Polaritychannel Type
- NPN
- Transistor Element Material
- SILICON
- Contact Plating
- Tin
- Current Collector Cutoff Max
- 50nA ICBO
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 7 Weeks
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Max Collector Current
- 600mA
- Akım Değeri
- 600mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Through Hole
- RoHS Durumu
- ROHS3 Compliant
- Collector Base Voltage Vcbo
- 180V
- Frequency Transition
- 100MHz
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Ambalaj
- Bulk
- Weight
- 179mg
- Yayın Yılı
- 2007
- Transistor Application
- AMPLIFIER
- Hfemin
- 80
- Temel Parça No
- 2N5551
- Emitter Base Voltage Vebo
- 6V
- Voltage Rated Dc
- 160V
- Power Dissipation
- 625mW
- Collectoremitter Saturation Voltage
- 200mV
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Pozisyonu
- BOTTOM
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