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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 60
- Temel Parça No
- 2N5550
- Power Dissipation
- 625mW
- Terminal Pozisyonu
- BOTTOM
- Voltage Rated Dc
- 140V
- Collectoremitter Saturation Voltage
- 250mV
- Lifecycle Status
- ACTIVE (Last Updated: 21 hours ago)
- Radyasyon Dayanımı
- No
- Collectoremitter Breakdown Voltage
- 140V
- Max Breakdown Voltage
- 140V
- Collector Emitter Voltage Vceo
- 140V
- Kurşunsuz
- Lead Free
- Transistor Application
- AMPLIFIER
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj Tipi
- Through Hole
- RoHS Durumu
- ROHS3 Compliant
- Collector Base Voltage Vcbo
- 160V
- Kurşunsuz Kodu
- yes
- Transition Frequency
- 100MHz
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Current Collector Cutoff Max
- 100nA ICBO
- Fabrika Tedarik Süresi
- 6 Weeks
- Emitter Base Voltage Vebo
- 6V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Montaj
- Through Hole
- Yükseklik
- 4.58mm
- Genişlik
- 3.86mm
- Max Power Dissipation
- 625mW
- Terminal Kaplaması
- Tin (Sn)
- Element Configuration
- Single
- Ambalaj
- Tape & Reel (TR)
- Weight
- 240mg
- Yayın Yılı
- 2000
- Max Collector Current
- 600mA
- Akım Değeri
- 600mA
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