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2N5550TF

ON Semiconductor

2N5550TF

Single BJT Transistors

RoHS: Compliant

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Specifications

Collector Base Voltage Vcbo
160V
Akım Değeri
600mA
Collectoremitter Breakdown Voltage
140V
Montaj
Through Hole
Element Configuration
Single
Emitter Base Voltage Vebo
6V
Voltage Rated Dc
140V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain Bandwidth Product
100MHz
RoHS Durumu
RoHS Compliant
Parça Durumu
Obsolete
Current Collector Cutoff Max
100nA ICBO
Vce Saturation Max Ib Ic
250mV @ 5mA, 50mA
Radyasyon Dayanımı
No
Hfemin
60
Max Power Dissipation
625mW
Transistor Type
NPN
Çalışma Sıcaklığı
150°C TJ
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Pin Sayısı
3
Collectoremitter Saturation Voltage
250mV
Dc Current Gain Hfe Min Ic Vce
60 @ 10mA 5V
Power Dissipation
625mW
Montaj Tipi
Through Hole
Frekans
300MHz
Max Collector Current
600mA
Temel Parça No
2N5550
Kurşunsuz Kodu
yes
Number Of Elements
1
Kurşunsuz
Lead Free
Weight
178.2mg
Collector Emitter Voltage Vceo
140V
Ambalaj
Tape & Reel (TR)

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