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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frekans
- 300MHz
- Montaj Tipi
- Through Hole
- Power Dissipation
- 625mW
- Temel Parça No
- 2N5550
- Max Collector Current
- 600mA
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Type
- NPN
- Yayın Yılı
- 2007
- Collectoremitter Saturation Voltage
- 250mV
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Pin Sayısı
- 3
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status
- ACTIVE (Last Updated: 16 hours ago)
- Collector Emitter Voltage Vceo
- 140V
- Ambalaj
- Tape & Box (TB)
- Weight
- 240mg
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
- Kurşunsuz Kodu
- yes
- Max Breakdown Voltage
- 140V
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 2 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gain Bandwidth Product
- 300MHz
- Voltage Rated Dc
- 140V
- Emitter Base Voltage Vebo
- 6V
- Element Configuration
- Single
- Collector Base Voltage Vcbo
- 160V
- JESD-609 Kodu
- e3
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 140V
- Montaj
- Through Hole
- Akım Değeri
- 600mA
- Terminal Pozisyonu
- BOTTOM
- Hfemin
- 60
- Radyasyon Dayanımı
- No
- Contact Plating
- Tin
- Max Power Dissipation
- 625mW
- Vce Saturation Max Ib Ic
- 250mV @ 5mA, 50mA
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