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2N5550BU

ON Semiconductor

2N5550BU

Single BJT Transistors

RoHS: Compliant

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Specifications

Pin Sayısı
3
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Dc Current Gain Hfe Min Ic Vce
60 @ 10mA 5V
Collectoremitter Saturation Voltage
250mV
Yayın Yılı
2007
Çalışma Sıcaklığı
150°C TJ
Transistor Type
NPN
Max Collector Current
600mA
Temel Parça No
2N5550
Montaj Tipi
Through Hole
Power Dissipation
625mW
Frekans
300MHz
Number Of Elements
1
Kurşunsuz Kodu
yes
Weight
178.2mg
Kurşunsuz
Lead Free
Ambalaj
Bulk
Collector Emitter Voltage Vceo
140V
Akım Değeri
600mA
Montaj
Through Hole
Collectoremitter Breakdown Voltage
140V
Collector Base Voltage Vcbo
160V
Element Configuration
Single
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain Bandwidth Product
300MHz
Voltage Rated Dc
140V
Emitter Base Voltage Vebo
6V
RoHS Durumu
RoHS Compliant
Vce Saturation Max Ib Ic
250mV @ 5mA, 50mA
Parça Durumu
Obsolete
Current Collector Cutoff Max
100nA ICBO
Max Power Dissipation
625mW
Hfemin
60

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